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FERD30H100S Datasheet(PDF) 3 Page - STMicroelectronics

Part No. FERD30H100S
Description  100 V field-effect rectifier diode
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD30H100S Datasheet(HTML) 3 Page - STMicroelectronics

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FERD30H100S
Characteristics
DocID029159 Rev 1
3/14
1.1
Characteristics (curves)
Figure 1: Average forward current versus ambient
temperature (δ = 0.5)
Figure 2: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 3: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 4: Junction capacitance versus reverse
voltage applied (typical values)
Figure 5: Forward voltage drop versus forward
current (typical values)
Figure 6: Forward voltage drop versus forward
current (typical values)
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
Tamb(°C)
T
= tp/T
tp
δ
IF(AV)(A)
Rth(j-a) = Rth(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
Single pulse
Zth(j-c)/Rth(j-c)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
10
20
30
40
50
60
70
80
90
100
VR(V)
Tj = 125 °C
Tj = 25 °C
Tj = 50 °C
Tj = 75 °C
Tj = 100 °C
Tj = 150 °C
IR(mA)
100
1000
10000
1
10
100
VR(V)
F = 1MHz
Vosc = 30 mVRMS
Tj = 25 °C
C(pF)
0.1
1.0
10.0
100.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF(V)
Tj = 25 °C
Tj = 75 °C
Tj = 125 °C
IF(A)
0
10
20
30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF(V)
Tj = 75 °C
Tj = 125 °C
Tj = 25 °C
IF(A)


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