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IRL540N Datasheet(PDF) 2 Page - International Rectifier |
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IRL540N Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRL540N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.044 VGS = 10V, ID = 18A ––– ––– 0.053 Ω VGS = 5.0V, ID = 18A ––– ––– 0.063 VGS = 4.0V, ID = 15A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 14 ––– ––– S VDS = 25V, ID = 18A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 74 ID = 18A Qgs Gate-to-Source Charge ––– ––– 9.4 nC VDS = 5.0V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 38 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 81 ––– ns ID = 18A td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.0Ω, VGS = 5.0V tf Fall Time ––– 62 ––– RD = 2.7 Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1800 ––– VGS = 0V Coss Output Capacitance ––– 350 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 1.9mH RG = 25Ω, IAS = 18A. (See Figure 12) . Notes: Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current I SD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2% S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = 18A Qrr Reverse RecoveryCharge ––– 1.1 1.7 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 30 120 Next Data Sheet Index Previous Datasheet To Order |
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