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IR3220 Datasheet(PDF) 2 Page - International Rectifier |
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IR3220 Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IR3220 2 WWW.IRF.COM Thermal Characteristics Symbol Parameter Typ. Max. Units Rth 1 Thermal junction to amb. resistance (stnd footprint 1 MOS on) 60 — Rth 2 Thermal junction to ambient resistance (1" sq. footprint 1 MOS on) 45 — °C/W Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage param- eters are referenced to Gnd lead. (TAmbient = 25 oC unless otherwise specified). Symbols with (2) refer to M2 output. Symbol Parameter Min. Max. Units Vm1 (2) Maximum M1 (M2) voltage (active clamp) Vcc-37 Vcc+0.3 Vin1 (2) Maximum IN 1 (IN 2) voltage -0.3 5.5 Vcc/gnd Maximum Vcc pin to GND pin voltage 0.3 50 I in1 (2) Maximum IN1 (IN 2) current -1 10 mA Vg1 (2) Maximum Gate 1 ( Gate 2 ) voltage -0.3 7.5 Vss Maximum SS voltage -0.3 5.5 Vrc Maximum Vrc voltage -0.3 5.5 Irc Maximum output current of the Vrc pin — 1 mA Vdg Maximum diagnostic output voltage -0.3 5.5 V Idg Maximum diagnostic output current -1 10 mA Isd cont. Diode max. permanent current (Rth=60°C/W) (1) — 3.0 (Rth=45°C/W) (1) — 4.0 Isd pulsed Diode max. pulsed current (1) — 15 ESD 1 Electrostatic discharge ( human body model C=100pF, R=1500 Ω) — tbd ESD 2 Electrostatic discharge ( machine model C=200pF, R=0 Ω, L=10µH) — tbd PD Maximum power dissipation ( Rth = 60°C/W ) — 1.5 W TJ max. Max. storage & operating junction temperature -40 +150 TL Lead temperature ( soldering 10 seconds ) — 300 Vcc max. Maximum Vcc voltage — 37 V Ig1 (2) max. Maximum gate current (Ton < 5 µS) — 100 Ig1 (2) avg. Maximum average gate current — 10 V V A °C (1) Limited by junction temperature (pulsed current limited also by internal wiring) Absolute Maximum Ratings V mA |
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