2SD1095 datasheet(1/2 Pages) ISC

Part #	2SD1095

Description	Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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isc Silicon NPN Power Transistor

2SD1095

DESCRIPTION

·

High Voltage Capability

·

Excellent Safe Operating Area

·

Fast Switching Speed

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Switching regulators

·

Motor controls .

·

DC-DC converters .

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1200

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

1.5

A

ICM

Collector Current-Peak

3

A

PC

Collector Power Dissipation

@TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃

/W

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2SD1095 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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