IPU60R1K5CE datasheet(3/14 Pages) INFINEON

Part #	IPU60R1K5CE

Description	600V CoolMOS짧 CE Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 14 page

3

600VCoolMOSªCEPowerTransistor

IPD60R1K5CE,IPU60R1K5CE

2016-03-31

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

5

3.2

A

TC=25°C

TC=100°C

Pulsed drain current

2)

ID,pulse

-

8

A

TC=25°C

Avalanche energy, single pulse

EAS

-

26

mJ

ID=0.6A; VDD=50V; see table 11

Avalanche energy, repetitive

EAR

-

0.09

mJ

ID=0.6A; VDD=50V; see table 11

Avalanche current, repetitive

IAR

-

0.6

A

-

MOSFET dv/dt ruggedness

dv/dt

-

50

V/ns

VDS=0...480V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

TO-251, TO252

Ptot

-

49

W

TC=25°C

Storage temperature

Tstg

-40

-

150

°C

-

Operating junction temperature

Tj

-40

-

150

°C

-

Continuous diode forward current

IS

-

3.5

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

8

A

TC=25°C

Reverse diode dv/dt

3)

dv/dt

-

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C

see table 9

Maximum diode commutation speed

dif/dt

-

500

A/

µs VDS=0...400V,ISD<=IS,Tj=25°C

see table 9

2Thermalcharacteristics

Table3ThermalcharacteristicsTO-251,TO252

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

-

2.57

°C/W -

Thermal resistance, junction - ambient

RthJA

-

62

°C/W leaded

Soldering temperature, wavesoldering

only allowed at leads

Tsold

-

260

°C

1.6mm (0.063 in.) from case for 10s

1) Limited by Tj max. Maximum duty cycle D=0.50

2) Pulse width tp limited by Tj,max

3)IdenticallowsideandhighsideswitchwithidenticalRG

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