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IPU60R1K5CE Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPU60R1K5CE Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 14 page 3 600VCoolMOSªCEPowerTransistor IPD60R1K5CE,IPU60R1K5CE 2016-03-31 Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID - - - - 5 3.2 A TC=25°C TC=100°C Pulsed drain current 2) ID,pulse - - 8 A TC=25°C Avalanche energy, single pulse EAS - - 26 mJ ID=0.6A; VDD=50V; see table 11 Avalanche energy, repetitive EAR - - 0.09 mJ ID=0.6A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation TO-251, TO252 Ptot - - 49 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 3.5 A TC=25°C Diode pulse current 2) IS,pulse - - 8 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/ µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 2Thermalcharacteristics Table3ThermalcharacteristicsTO-251,TO252 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.57 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.50 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG |
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