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SPB08P06P Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # SPB08P06P
Description  SIPMOS짰 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPB08P06P Datasheet(HTML) 6 Page - Infineon Technologies AG

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SPB08P06P
G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-6.2 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-250 µA
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
typ.
98 %
0
100
200
300
400
500
600
700
800
-60
-20
20
60
100
140
180
T j [°C]
Ciss
Coss
Crss
10
3
10
2
10
1
0
5
10
15
20
25
-V DS [V]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-60
-20
20
60
100
140
180
T j [°C]
25 °C, typ
175 °C, typ
25 °C, 98%
175 °C, 98%
10
1
10
0
10
-1
10
-2
0
0.5
1
1.5
2
2.5
3
-V SD [V]
Rev 1.
7
page 6
20
12-09-07


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