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DG213DY Datasheet(PDF) 6 Page - TEMIC Semiconductors |
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DG213DY Datasheet(HTML) 6 Page - TEMIC Semiconductors |
6 / 7 page DG213 6 Siliconix S-56461—Rev. C, 29-Dec-97 Test Circuits (Cont’d) Figure 3. Break-Before-Make 0 V Logic Input Switch Switch Output 3 V 50% 0 V Output 0 V 90% VO2 VO1 90% VS1 VS2 tD tD VO2 CL (includes fixture and stray capacitance) V+ S2 V– S1 VL VS2 IN2 D2 VS1 RL2 300 k W D1 VO1 CL2 35 pF –15 V GND +5 V +15 V RL1 1 k W CL1 35 pF IN1 Figure 4. Off Isolation S IN RL D Rg = 50 W VS VO 0V, 2.4 V Off Isolation = 20 log VS VO V+ –15 V GND V– C C +15 V IN1 0V, 2.4 V VO +15 V –15 V GND RL V+ V– NC XTALK Isolation = 20 log C VS C VO 0V, 2.4 V 50 W VS S1 IN2 S2 Rg = 50 W D1 D2 C = RF bypass Figure 5. Channel-to-Channel Crosstalk Figure 6. Charge Injection CL 1000 pF Vg 3 V D V+ V– Rg –15 V GND IN S VO +15 V VO DVO INX ON ON OFF DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO |
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