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STP180N10F3 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STP180N10F3 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor STP180N10F3 DESCRIPTION · Ultra low on-resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 120 A Drain Current-continuous@ TC=100℃ 120 IDM Drain Current-Single Plused 480 A Ptot Total Dissipation@TC=25℃ 315 W Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.48 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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