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IPP029N06N Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPP029N06N
Description  Metal Oxide Semiconductor Field Effect Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP029N06N Datasheet(HTML) 6 Page - Infineon Technologies AG

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6
OptiMOSTMPower-Transistor,60V
IPP029N06N
Rev.2.6,2015-02-10
Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
20
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
11
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate to drain charge
2)
Qgd
-
11
15
nC
VDD=30V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
19
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate charge total
2)
Qg
-
56
66
nC
VDD=30V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.8
-
V
VDD=30V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
49
-
nC
VDS=0.1V,VGS=0to10V
Output charge
2)
Qoss
-
65
82
nC
VDD=30V,VGS=0V
Table7Reversediode
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Diode continuous forward current
IS
-
-
120
A
TC=25°C
Diode pulse current
IS,pulse
-
-
480
A
TC=25°C
Diode forward voltage
VSD
-
1.0
1.2
V
VGS=0V,IF=100A,Tj=25°C
Reverse recovery time
2)
trr
-
54
86
ns
VR=30V,IF=100A,diF/dt=100A/µs
Reverse recovery charge
Qrr
-
77
-
nC
VR=30V,IF=100A,diF/dt=100A/µs
1) See
″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test


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