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ISO1540QDQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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ISO1540QDQ1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 30 page 1 VCC1 8 VCC2 2 SDA1 7 SDA2 3 SCL1 6 SCL2 4 GND1 5 GND2 Not to scale Side 2 Side 1 4 ISO1540-Q1, ISO1541-Q1 SLLSEX0 – NOVEMBER 2016 www.ti.com Product Folder Links: ISO1540-Q1 ISO1541-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated ISO1541-Q1 D Package 8-Pin SOIC Top View Pin Functions—ISO1541-Q1 PIN I/O DESCRIPTION NAME NO. GND1 4 — Ground, side 1 GND2 5 — Ground, side 2 SCL1 3 I Serial clock input, side 1 SCL2 6 O Serial clock output, side 2 SDA1 2 I/O Serial data input / output, side 1 SDA2 7 I/O Serial data input / output, side 2 VCC1 1 — Supply voltage, side 1 VCC2 8 — Supply voltage, side 2 (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values here within are with respect to the local ground pin (GND1 or GND2) and are peak voltage values. (3) Maximum voltage must not exceed 6 V. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Voltage VCC1, VCC2 –0.5 6 V SDA1, SCL1 –0.5 VCC1 + 0.5(3) SDA2, SCL2 –0.5 VCC2 + 0.5(3) IO Output current SDA1, SCL1 –20 20 mA SDA2, SCL2 –100 100 TJ(MAX) Maximum junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) All pins except bus pins ±4000 V Bus pins ±8000 Charged-device model (CDM), per AEC Q100-011 ±1500 |
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