IS41C16257

IS41LV16257

6

Integrated Silicon Solution, Inc. — 1-800-379-4774

DR004-1B

05/24/99

Symbol Parameter

Test Condition

Speed

Min.

Max.

Unit

Input Leakage Current

–10

10

µA

Other inputs not under test = 0V

Output Leakage Current

Output is disabled (Hi-Z)

–10

10

µA

Output High Voltage Level

2.4

—

V

Output Low Voltage Level

—

0.4

V

Stand-by Current: TTL

Com.

5V

—

2

mA

Ind.

5V

3

Stand-by Current: TTL

Com. 3.3V

—

1

mA

Ind. 3.3V

2

Stand-by Current: CMOS

5V

—

2

mA

Stand-by Current: CMOS

3.3V

—

1

mA

Operating Current:

RAS, LCAS, UCAS,

-35

—

230

mA

-60

—

170

Average Power Supply Current

Operating Current:

-35

—

220

mA

-60

—

160

Average Power Supply Current

Refresh Current:

-35

—

230

mA

-60

—

170

Average Power Supply Current

Refresh Current:

RAS, LCAS, UCAS Cycling

-35

—

230

mA

-60

—

170

Average Power Supply Current

Notes:

1. An initial pause of 200

µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device

operation is assured.The eight

2. Dependent on cycle rates.

3. Specified values are obtained with minimum cycle time and the output open.

4. Column-address is changed once each fast page cycle.

5. Enables on-chip refresh and address counters.