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IS41C16257-60T Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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IS41C16257-60T Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
5 / 17 page IS41C16257 IS41LV16257 Integrated Silicon Solution, Inc. — 1-800-379-4774 5 DR004-1B 05/24/99 ISSI® ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters Rating Unit VT Voltage on Any Pin Relative to GND 5V –1.0 to +7.0 V 3.3V –0.5 t0 +4.6 VCC Supply Voltage 5V –1.0 to +7.0 V 3.3V –0.5 t0 +4.6 IOUT Output Current 50 mA PD Power Dissipation 1 W TA Operation Temperature Com. 0 to 70 °C Ind. –40 to +85 TSTG Storage Temperature –55 to +125 °C Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND) Symbol Parameter Voltage Min. Typ. Max. Unit VCC Supply Voltage 5V 4.5 5.0 5.5 V VCC Supply Voltage 3.3V 3.0 3.3 3.6 V VIH Input High Voltage 5V 2.4 — VCC + 1.0 V VIH Input High Voltage 3.3V 2.0 — VCC + 0.3 V VIL Input Low Voltage 5V –1.0 — 0.8 V VIL Input Low Voltage 3.3 –0.3 — 0.8 V TA Ambient Temperature Com. 0 — 70 °C Ind. –40 — 85 CAPACITANCE(1,2) Symbol Parameter Max. Unit CIN1 Input Capacitance: A0-A8 5 pF CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE 7pF CIO Data Input/Output Capacitance: I/O0-I/O15 7 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25 °C, f = 1 MHz, VCC = 5.0V + 10% or Vcc=3.3V ± 10%. |
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