IS41C16257

IS41LV16257

Integrated Silicon Solution, Inc. — 1-800-379-4774

5

DR004-1B

05/24/99

Symbol

Parameters

Rating

Unit

Voltage on Any Pin Relative to GND

5V

–1.0 to +7.0

V

3.3V

–0.5 t0 +4.6

Supply Voltage

5V

–1.0 to +7.0

V

3.3V

–0.5 t0 +4.6

Output Current

50

mA

Power Dissipation

1

W

Operation Temperature

Com.

0 to 70

°C

Ind.

–40 to +85

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

Symbol

Parameter

Voltage

Min.

Typ.

Max.

Unit

Supply Voltage

5V

4.5

5.0

5.5

V

Supply Voltage

3.3V

3.0

3.3

3.6

V

Input High Voltage

5V

2.4

—

V

Input High Voltage

3.3V

2.0

—

V

Input Low Voltage

5V

–1.0

—

0.8

V

Input Low Voltage

3.3

–0.3

—

0.8

V

Ambient Temperature

Com.

0

—

70

°C

Ind.

–40

—

85

Symbol

Parameter

Max.

Unit

Input Capacitance: A0-A8

5

pF

Input Capacitance:

RAS, UCAS, LCAS, WE, OE

7pF

Data Input/Output Capacitance: I/O0-I/O15

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.