IPI200N25N3G datasheet(3/11 Pages) INFINEON

Part #	IPI200N25N3G

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB200N25N3 G

IPP200N25N3 G

IPI200N25N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

5340

7100

pF

Output capacitance

C oss

-

297

395

Reverse transfer capacitance

C rss

-

4

-

Turn-on delay time

t d(on)

-

18

-

ns

Rise time

t r

-

20

-

Turn-off delay time

t d(off)

-

45

-

Fall time

t f

-

12

-

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-

22

-

nC

Gate to drain charge

Q gd

-

7

-

Switching charge

Q sw

-

13

-

Gate charge total

Q g

-

64

86

Gate plateau voltage

V plateau

-

4.2

-

V

Output charge

Q oss

V DD=100 V, V GS=0 V

-

135

179

nC

Reverse Diode

Diode continous forward current

I S

-

64

A

Diode pulse current

I S,pulse

-

256

Diode forward voltage

V SD

V GS=0 V, I F=64 A,

T j=25 °C

-

1

1.2

V

Reverse recovery time

t rr

-

170

-

ns

Reverse recovery charge

Q rr

-

780

-

nC

4) See figure 16 for gate charge parameter definition

V R=100 V, I F=25 A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=100 V,

f =1 MHz

V DD=100 V,

V GS=10 V, I D=25 A,

R G=1.6 W

V DD=100 V, I D=25 A,

V GS=0 to 10 V

Rev. 2.4

page 3

2011-07-14

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