IPP200N25N3G_11 datasheet(1/11 Pages) INFINEON

Part #	IPP200N25N3G

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB200N25N3 G

IPP200N25N3 G

IPI200N25N3 G

OptiMOSTM3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R

DS(on) product (FOM)

• Very low on-resistance R

DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

64

A

T C=100 °C

46

Pulsed drain current

2)

I D,pulse

T C=25 °C

256

Avalanche energy, single pulse

E AS

I D=47 A, R GS=25 W

320

mJ

Reverse diode dv /dt

dv /dt

10

kV/µs

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

300

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

2) See figure 3

Value

1)J-STD20 and JESD22

V

DS

250

V

R

DS(on),max

20

m

W

I

D

64

A

Product Summary

Type

IPB200N25N3 G

IPP200N25N3 G

IPI200N25N3 G

Package

PG-TO263-3

PG-TO220-3

PG-TO262-3

Marking

200N25N

Rev. 2.4

page 1

2011-07-14

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IPP200N25N3G Datasheet(PDF) 1 Page - Infineon Technologies AG

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