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STGWT40HP65FB Datasheet(PDF) 3 Page - STMicroelectronics

Part # STGWT40HP65FB
Description  Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT40HP65FB Datasheet(HTML) 3 Page - STMicroelectronics

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STGWT40HP65FB
Electrical ratings
DocID028465 Rev 3
3/17
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
80
A
Continuous collector current at TC = 100 °C
40
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
± 30
V
IF(2)
Continuous forward current at TC = 25 °C
5
A
Continuous forward current at TC = 100 °C
5
IFP(3)
Pulsed forward current
10
A
PTOT
Total dissipation at TC = 25 °C
283
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature range
- 55 to 175
Notes:
(1)Pulse width limited by maximum junction temperature.
(2)Limited by wires.
(3)Pulsed forward current.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.53
°C/W
RthJC
Thermal resistance junction-case diode
5
RthJA
Thermal resistance junction-ambient
50


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