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STD5N80K5 Datasheet(PDF) 5 Page - STMicroelectronics

Part No. STD5N80K5
Description  N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STD5N80K5 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STD5N80K5
Electrical characteristics
DocID028513 Rev 2
5/16
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD= 400 V, ID = 2 A, RG
= 4.7 Ω
VGS = 10 V
(see Figure 14: "Test circuit for
resistive load switching times" and
Figure 19: "Switching time
waveform")
-
12.7
-
ns
tr
Rise time
-
11.7
-
ns
td(off)
Turn-off delay time
-
23
-
ns
tf
Fall time
-
14.8
-
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
4
A
ISDM(1)
Source-drain current
(pulsed)
-
16
A
VSD(2)
Forward on voltage
ISD = 4 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 4 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
-
265
ns
Qrr
Reverse recovery charge
-
1.59
µC
IRRM
Reverse recovery current
-
12
A
trr
Reverse recovery time
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
-
386
ns
Qrr
Reverse recovery charge
-
2.18
µC
IRRM
Reverse recovery current
-
11.3
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS= ± 1mA, ID= 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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