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STD5N80K5 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STD5N80K5
Description  N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STD5N80K5 Datasheet(HTML) 4 Page - STMicroelectronics

 
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Electrical characteristics
STD5N80K5
4/16
DocID028513 Rev 2
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
800
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V
TC = 125 °C(1)
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDD = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 2 A
1.50
1.75
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
177
-
pF
Coss
Output capacitance
-
15
-
pF
Crss
Reverse transfer capacitance
-
0.3
-
pF
Co(tr)(1)
Equivalent capacitance time
related
VGS = 0, VDS = 0 to 640 V
-
33
-
pF
Co(er)(2)
Equivalent capacitance
energy related
12
pF
Rg
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
16
-
Qg
Total gate charge
VDD = 640 V, ID = 4 A
VGS= 10 V
(see Figure 15: "Test circuit
for gate charge behavior")
-
5
-
nC
Qgs
Gate-source charge
-
1.7
-
nC
Qgd
Gate-drain charge
-
2.9
-
nC
Notes:
(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to
80% VDSS.


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