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STD5N80K5 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STD5N80K5
Description  N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STD5N80K5 Datasheet(HTML) 3 Page - STMicroelectronics

 
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STD5N80K5
Electrical ratings
DocID028513 Rev 2
3/16
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
4
A
ID
Drain current (continuous) at TC = 100 °C
2.3
A
ID(1)
Drain current (pulsed)
16
A
PTOT
Total dissipation at TC = 25 °C
60
W
dv/dt (2)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (3)
MOSFET dv/dt ruggedness
50
Tj
Operating junction temperature range
- 55 to 150
°C
Tstg
Storage temperature range
Notes:
(1)Pulse width limited by safe operating area
(2)ISD ≤ 4 A, di/dt =100 A/μs; VDS peak < V(BR)DSS, VDD = 640 V
(3)VDS ≤ 640 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
2.08
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
50
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by
Tjmax)
1.2
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
165
mJ


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