ME2303 datasheet(2/5 Pages) SUNMATE

Part #	ME2303

Description	Super high density cell design for extremely low RDS(ON)

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Manufacturer	SUNMATE [SUNMATE electronic Co., LTD]

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P-Channel Enhancement Mode Mosfet

Symbol

Parameter

Limit

Min

Typ

Max

Unit

STATIC

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-30

V

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1

-3.0

V

IGSS

Gate Leakage Current

VDS=0V, VGS=±20V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V

-1

μ

A

VGS=-10V, ID= -1.7A

60

75

RDS(ON)

Drain-Source On-Resistance

a

VGS=-4.5V, ID= -1.3A

75

100

mΩ

VSD

Diode Forward Voltage

IS=-1.25A, VGS=0V

-0.7

-1.4

V

DYNAMIC

Qg

Total Gate Charge

14.4

Qgs

Gate-Source Charge

2.7

Qgd

Gate-Drain Charge

VDS=-15V, VGS=-10V,

ID=-1.7A

3.6

nC

Rg

Gate resistance

VDS=0V, VGS=0V, f=1MHz

4

Ω

Ciss

Input Capacitance

464

Coss

Output Capacitance

72

Crss

Reverse Transfer Capacitance

VDS=-15V, VGS=0V,

f=1MHz

23

pF

td(on)

Turn-On Delay Time

32

tr

Turn-On Rise Time

17

td(off)

Turn-Off Delay Time

40

tf

Turn-Off Fall time

VDS=-15V, RL =15Ω

RGEN=6Ω, VGS=-10V

5

ns

Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%

Electrical Characteristics

(TA =25℃ Unless Otherwise Specified)

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ME2303 Datasheet(PDF) 2 Page - SUNMATE electronic Co., LTD

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