DMN601DMK_16 datasheet(3/7 Pages) DIODES

Part #	DMN601DMK

Description	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 7 page

DMN601DMK

Document number: DS30657 Rev. 6 - 2

3 of 7

www.diodes.com

October 2015

DMN601DMK

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60



V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

IDSS



1

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS



10

µA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.0

1.6

2.5

V

VDS = 10V, ID = 1mA

Static Drain-Source On-Resistance

RDS(ON)



2.4

4.0

Ω

VGS = 10V, ID = 200mA

VGS = 4V, ID = 200mA

Forward Transfer Admittance

|Yfs|

100



mS

VDS =10V, ID = 200mA

Diode Forward Voltage

VSD

0.5



1.4

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



30

50

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



5

25

pF

Reverse Transfer Capacitance

Crss



3

5.0

pF

Gate Resistance

Rg



133



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg



304



nC

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

Qgs



84



Gate-Drain Charge

Qgd



203



Turn-On Delay Time

tD(ON)



3.9



nS

VDS = 30V, ID = 0.2A,

VGS = 10V, RG = 25Ω, RL = 150Ω

Turn-On Rise Time

tR



3.4



Turn-Off Delay Time

tD(OFF)



15.7



Turn-Off Fall Time

tF



9.9



Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

.

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