DMN55D0UT

Document number: DS31330 Rev. 6 - 2

2 of 7

www.diodes.com

December 2015

© Diodes Incorporated

DMN55D0UT

Characteristic

Symbol

Value

Units

Drain-Source Voltage

50

V

Gate-Source Voltage

12

V

Drain Current (Note 6) Continuous

160

mA

Pulsed Drain Current (Note 6)

560

mA

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

200

mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

50





V

Zero Gate Voltage Drain Current





1

µA

Gate-Source Leakage





1.0

5.0

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.7

0.8

1.0

V

Static Drain-Source On-Resistance



3.1

4

Ω



4

5

Forward Transconductance

180





mS

Diode Forward Voltage

—

0.70



1.3



V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



25



pF

Output Capacitance



5



pF

Reverse Transfer Capacitance



2.1



pF

Gate Resistance

—



500

—



Ω

—



295

—



pC

—

636

—

pC

Gate-Source Charge

—



72

—



pC

Gate-Drain Charge

—



18

—



pC

Turn-On Delay Time

—



6.0

—



ns

Turn-On Rise Time

—



4.4

—



ns

Turn-Off Delay Time

—



23.4

—



ns

Turn-Off Fall Time

—



11.0

—



ns

Notes:

6. Device mounted on FR-4 PCB, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.