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XC9106D3ML Datasheet(PDF) 5 Page - Torex Semiconductor |
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XC9106D3ML Datasheet(HTML) 5 Page - Torex Semiconductor |
5 / 8 page Preliminary " ELECTRICAL CHARACTERISTICS XC9106D003MR, XC9107D003MR (FOSC=300 (kHz) Ta=25 OC *1 *1 Test Conditions: Unless otherwise stated, CL: ceramic, recommended MOS FET should be connected. VDD = (V) ! Vref = (V) , RFB1, 2 x 10 VIN = (V) ! IOUT = (mA) Notes 1* : " TYPICAL APPLICATION CIRCUIT 5 PWM Control, PWM/PFM Switching Control, Step-up DC/DC Converters Externally Applied Reference Voltage (Vref) Although the IC starts step-up operations from a VDD of 0.8V, the output voltage and oscillation frequency are stabilized at VDD ≥ 1.8V or (Vref applied voltage + 0.7V). Therefore, a VDD of more than 1.8V or (Vref applied voltage + 0.7V) is recommended when VDD is supplied from VIN or other power sources. XC9106 / 07 Series PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Output Voltage VOUT Vref = 0.9V 8.820 9.000 9.180 V 1 Reference Voltage Range Vref 0.8 2.5 V - Vref = 0.8V 0.784 FB Control Voltage VFB Vref = 0.9V 0.882 0.800 0.816 V 4 Power Supply Voltage Range VDD VDD as shown right or (Vref applied voltage + 0.7V) 1.8 10.0 V - Operation Start Voltage VST1 Recommended Circuit using 2SD1628, IOUT=1.0mA 0.9 V 3 Oscillation Start Voltage VST2 No external connections CE/Vref=0.9V, Voltage applied, FB=0V 0.8 V 4 Operation Holding Voltage VHLD Recommended Circuit using 2SD1628, IOUT=1.0mA 0.7 V 3 Supply Current 1 IDD1 Same as VST2, VDD=3.300V 62 88 µA 4 Supply Current 2 IDD2 Same as IDD1, FB=1.2V 16 22 µA 4 Stand-by Current ISTB Same as IDD1, CE/Vref=0V 1.0 µA 5 Oscillation Frequency FOSC Same as IDD1 255 300 345 KHz 4 Maximum Duty Ratio MAXDTY Same as IDD1 75 81 87 % 4 PFM Duty Ratio PFMDTY No Load (XC9106 series) 24 32 40 % 1 Efficiency EFFI Recommended Circuit using XP161A1355 85 % 1 Soft-start Time TSS Vref=0.9V 5.0 10.0 20.0 mS 1 CE "High" Voltage VCEH Same as IDD1 0.65 V 5 CE "Low" Voltage VCEL Same as IDD1 0.20 V 5 EXT "High" ON Resistance REXTH Same as IDD1, VEXT=VOUT-0.4V 24 36 Ω 4 EXT "Low" ON Resistance REXTL Same as IDD1, VEXT=0.4V 16 24 Ω 4 Same as IDD2, CE=0.8V -1.0 CE "High" Current ICEH Same as IDD2, CE=2.5V 0.0 CE "Low" Current ICEL Same as IDD2, CE=0V -0.1 µA 5 FB "High" Current IFBH Same as IDD2, FB=VDD 0.1 µA 5 FB "Low" Current IFBL Same as IDD2, FB=1.0V -0.1 µA 5 3.30 0.09 3.30 50 When obtaining VDD from a source other than VOUT, please insert a capacitor CDD between the VDD pin and the GND pin in order to provide stabler operations. Please wire CL & CIN between the VOUT/VDD pin and the GND pin. Strengthen the wiring sufficiently. When using a capacitor other than ceramic or low ESR at CL, please take away RSENSE and short. Insert Rb and CB when using a bipolar NPN Transistor. 0.900 0.918 Vref = 2.5V 2.450 2.500 2.500 2.5 µA 5 0.0 VOUT Nch Power MOS FET RSENSE L VIN SD RFB1 RFB2 CFB CE/Vref 1 5 4 3 2 CL Rb Cb Semiconductor Ltd. |
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Similar Description - XC9106D3ML |
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