Preliminary

" ELECTRICAL CHARACTERISTICS

XC9106D003MR, XC9107D003MR

(FOSC=300 (kHz)

Ta=25

*1

*1

Test Conditions: Unless otherwise stated, CL: ceramic, recommended MOS FET should be connected.

VDD =

(V)

! Vref =

(V) ,

RFB1, 2 x 10

VIN =

(V)

! IOUT =

(mA)

Notes 1* :

" TYPICAL APPLICATION CIRCUIT

5

PWM Control, PWM/PFM Switching Control,

Step-up DC/DC Converters

Externally Applied Reference Voltage (Vref)

Although the IC starts step-up operations from a VDD of 0.8V, the output voltage and oscillation frequency are stabilized at

VDD

≥ 1.8V or (Vref applied voltage + 0.7V). Therefore, a VDD of more than 1.8V or (Vref applied voltage + 0.7V) is recommended when VDD is

supplied from VIN or other power sources.

XC9106 / 07 Series

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS CIRCUIT

Output Voltage

VOUT

Vref = 0.9V

8.820

9.000

9.180

V

1

Reference Voltage Range

Vref

0.8

2.5

V

-

Vref = 0.8V

0.784

FB Control Voltage

VFB

Vref = 0.9V

0.882

0.800

0.816

V

4

Power Supply Voltage Range

VDD

VDD as shown right or (Vref applied voltage + 0.7V)

1.8

10.0

V

-

Operation Start Voltage

VST1

Recommended Circuit using 2SD1628, IOUT=1.0mA

0.9

V

3

Oscillation Start Voltage

VST2

No external connections

CE/Vref=0.9V, Voltage applied, FB=0V

0.8

V

4

Operation Holding Voltage

VHLD

Recommended Circuit using 2SD1628, IOUT=1.0mA

0.7

V

3

Supply Current 1

IDD1

Same as VST2, VDD=3.300V

62

88

µA

4

Supply Current 2

IDD2

Same as IDD1, FB=1.2V

16

22

µA

4

Stand-by Current

ISTB

Same as IDD1, CE/Vref=0V

1.0

µA

5

Oscillation Frequency

FOSC

Same as IDD1

255

300

345

KHz

4

Maximum Duty Ratio

MAXDTY

Same as IDD1

75

81

87

%

4

PFM Duty Ratio

PFMDTY

No Load

(XC9106 series)

24

32

40

%

1

Efficiency

EFFI

Recommended Circuit using XP161A1355

85

%

1

Soft-start Time

TSS

Vref=0.9V

5.0

10.0

20.0

mS

1

CE "High" Voltage

VCEH

Same as IDD1

0.65

V

5

CE "Low" Voltage

VCEL

Same as IDD1

0.20

V

5

EXT "High" ON Resistance

REXTH

Same as IDD1, VEXT=VOUT-0.4V

24

36

Ω

4

EXT "Low" ON Resistance

REXTL

Same as IDD1, VEXT=0.4V

16

24

Ω

4

Same as IDD2, CE=0.8V

-1.0

CE "High" Current

ICEH

Same as IDD2, CE=2.5V

0.0

CE "Low" Current

ICEL

Same as IDD2, CE=0V

-0.1

µA

5

FB "High" Current

IFBH

Same as IDD2, FB=VDD

0.1

µA

5

FB "Low" Current

IFBL

Same as IDD2, FB=1.0V

-0.1

µA

5

3.30

0.09

3.30

50

When obtaining VDD from a source other than VOUT, please insert a

capacitor CDD between the VDD pin and the GND pin in order to

provide stabler operations.

Please wire CL & CIN between the VOUT/VDD pin and the GND pin.

Strengthen the wiring sufficiently. When using a capacitor other than

ceramic or low ESR at CL, please take away RSENSE and short.

Insert Rb and CB when using a

bipolar NPN Transistor.

0.900

0.918

Vref = 2.5V

2.450

2.500

2.500

2.5

µA

5

0.0

Nch Power

MOS FET

RSENSE

L

SD

CE/Vref

1

5

4

3

2

CL

Rb

Cb

Semiconductor Ltd.