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VWM350-0075P Datasheet(PDF) 1 Page - IXYS Corporation

Part No. VWM350-0075P
Description  Three phase full bridge with Trench MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

VWM350-0075P Datasheet(HTML) 1 Page - IXYS Corporation

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© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
Three phase full bridge
with Trench MOSFETs
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
- etc...
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
-low R
DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
V
DSS
= 75 V
R
DSon = 2.3 m
I
D25
= 340 A
MOSFETs T1 - T6
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ = 25°C to 150°C
75
V
V
GS
±20
V
I
D25
T
C = 25°C
340
A
I
D80
T
C = 80°C
250
A
I
D25
T
C = 25°C (diode)
340
A
I
D80
T
C = 80°C (diode)
250
A
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS = 10 V; ID = ID80
2.3
3.3 m
V
GSth
V
DS = 20 V; ID = 2 mA
2
4
V
I
DSS
V
DS = 75V; VGS = 0 V; TVJ =
25°C
0.02
mA
T
VJ = 125°C
0.25
mA
I
GSS
V
GS = ±20 V; VDS = 0 V
0.2
µA
Q
g
450
nC
Q
gs
60
nC
Q
gd
170
nC
t
d(on)
60
ns
t
r
170
ns
t
d(off)
320
ns
t
f
200
ns
V
F
(diode) I
F = 175 A; VGS= 0 V
1.1
1.6
V
t
rr
(diode) I
F = 40 A; -di/dt = 200 A/µs; VDS= 30 V
90
ns
R
thJC
0.26 K/W
R
thJH
with heat transfer paste
0.51
K/W
V
GS= 10 V; VDS = 0.5 • VDSS; ID = 175A
V
GS= 10 V; VDS = 0.5 • VDSS;
I
D = 175 A; RG = 2.2 Ω
VWM 350-0075P
Preliminary data
L+
G1
L1
L2
L3
S1
G2
S2
S5
G4
S4
G6
L-
G3
S3
G5
S6
T1
T2
T3
T4
T5
T6
Ratings and characteristic values are per individual MOSFET


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