IPD30N10S3L-34 datasheet(5/9 Pages) INFINEON

Part #	IPD30N10S3L-34

Description	OptiMOS짰-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 9 page

IPD30N10S3L-34

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C

R DS(on) = f(I D); T j = 25 °C

parameter: V GS

7 Typ. transfer characteristics

8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 6V

R DS(on) = f(T j); I D = 30 A; V GS = 10 V

parameter: T j

10

20

30

40

50

60

-60

-20

20

60

100

140

180

T j [°C]

3 V

3.5 V

4 V

4.5 V

5 V

10 V

0

40

80

120

0

1

2

3

4

5

6

V DS [V]

3 V

3.5 V

4 V

4.5 V

5 V

10 V

20

30

40

50

60

70

80

0

20

40

60

I D [A]

-55 °C

25 °C

175 °C

0

20

40

60

1

2

3

4

5

V GS [V]

Rev. 1.1

page 5

2011-10-06

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IPD30N10S3L-34 Datasheet(PDF) 5 Page - Infineon Technologies AG

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