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IPD050N03LG Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPD050N03LG Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C 68 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.2 K/W SMD version, device on PCB R thJA minimal footprint - - 75 6 cm² cooling area 4) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 5.8 7.3 m W V GS=10 V, I D=30 A - 4.2 5 Gate resistance R G - 1.5 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 38 77 - S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin 3) See figure 13 for more detailed information Value Values 2) See figure 3 for more detailed information Drain-source on-state resistance 5) Rev. 2.0 page 2 2013-10-28 |
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