IPD050N03LG datasheet(2/12 Pages) INFINEON

Part #	IPD050N03LG

Description	OptiMOS짰3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD050N03L G

IPF050N03L G

IPS050N03L G

IPU050N03L G

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

68

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

2.2

K/W

SMD version, device on PCB

R thJA

minimal footprint

-

75

6 cm² cooling area

4)

-

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

30

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=250 µA

1

-

2.2

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=30 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

R DS(on)

V GS=4.5 V, I D=30 A

-

5.8

7.3

m

W

V GS=10 V, I D=30 A

-

4.2

5

Gate resistance

R G

-

1.5

-

W

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

38

77

-

S

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

5) Measured from drain tab to source pin

3) See figure 13 for more detailed information

Value

Values

2) See figure 3 for more detailed information

Drain-source on-state resistance

5)

Rev. 2.0

page 2

2013-10-28

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