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DMF6N70-TU Datasheet(PDF) 2 Page - DIYI Electronic Technology Co., Ltd. |
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DMF6N70-TU Datasheet(HTML) 2 Page - DIYI Electronic Technology Co., Ltd. |
2 / 8 page 2 / 8 THERMAL DATA 6N70 700V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220 /TO-262/TO-263 ITO-220 θJA 62.5 120 °C/W Junction to Case TO-220 /TO-262/TO-263 θJC 0.78 °C/W ITO-220 2.78 May.2015-REV.00 www.dyelec.com PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 700 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 2.8 4 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=3A - 1.47 1.7 Ω Zero Gate Voltage Drain Current IDSS VDS=700V,VGS=0V - 0.03 1.0 uA Gate-Source Leakage Current IGSS VGS=+30V,VDS=0V - +10 +100 nA Diode Forward Voltage VSD IS=6A,VGS=0V - 0.87 1.4 V Dynamic (Note 4) Total Gate Charge Qg VDS=560V, ID=6A, VGS=10V (Note 2,3) - 16.5 - nC Gate-Source Charge Qgs - 4.8 - Gate-Drain Charge Qgd - 5.7 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHZ - 831 - pF Output Capacitance Coss - 92 - Reverse Transfer Capacitance Crss - 0.8 - Turn-On Delay Time td(on) VDD=350V, ID=6A, RG=25Ω (Note 2,3) - 25 - ns Turn-On Rise Time tr - 38 - Turn-Off Delay Time td(off) - 49 - Turn-Off Fall Time tf - 30 - Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current IS --- - - 6 A Maximum Pulsed Drain-Source Diode Forward Current ISM --- - - 24 A Reverse Recovery Time trr VGS=0V, IS=6A dIF/ dt=100A/us (Note 2) - 531 - ns Reverse Recovery Charge Qrr - 3.3 - uC |
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