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DMK5N65-TU Datasheet(PDF) 2 Page - DIYI Electronic Technology Co., Ltd. |
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DMK5N65-TU Datasheet(HTML) 2 Page - DIYI Electronic Technology Co., Ltd. |
2 / 9 page 2 / 9 5N65 650V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GS V = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 1 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DS V = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) 2.0 2.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 515 670 pF Output Capacitance COSS pF 55 72 Reverse Transfer Capacitance CRSS pF 6.5 8.5 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10 30 ns Turn-On Rise Time tR ns 42 90 Turn-Off Delay Time tD(OFF) ns 38 85 Turn-Off Fall Time tF 100 ns Total Gate Charge QG VDS= 520V,ID= 5.0A, VGS= 10V (Note 1, 2) 15 19 nC Gate-Source Charge QGS nC 2.5 Gate-Drain Charge QGD nC 6.6 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Reverse Recovery Time trr VGS = 0 V, IS = 5A, dIF/dt = 100 A/ μs (Note 1) 300 ns Reverse Recovery Charge QRR μC 2.2 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature Mar.2015-REV.00 www.dyelec.com 46 VDD = 325V, ID =5A, RG = 25Ω (Note 1, 2) GS V = 0 V, IS = 5A GS V =10V, ID = 2.5A THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 110 Junction to Case θJC 2.35 °C/W ITO-220 5.5 TO-251/ TO-252 2.9 TO-220/ITO-220 TO-262/TO-263 |
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