4N65

1 / 10

May,2015-REV.00

www.dyelec.com

1. Gate

2. Drain

3. Source

Pin Definition:

PRODUCT SUMMARY

650

4

●

●

●

●

650V N-Channel Power MOSFET

RDS(ON)<2.4Ω @ VGS=10V

Fast switching capability

Lead free in compliance with EU RoHS directive.

Green molding compound

Ordering Information

●

Case: TO-251,TO-252,TO-220,ITO-220

TO-262,TO-263 Package

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

6

50

V

Gate-Source Voltage

±30

V

Continuous Drain Current

4.0

A

Pulsed Drain Current (Note 2)

16

A

Avalanche Energy

Single Pulsed (Note 3)

260

mJ

Power Dissipation

TO-220

/TO-262/TO-263

1

06

W

ITO-220

35

W

TO-251/TO-252

5

0

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

Part No.

Package

Packing

DMP4N65-TU

TO-251

75pcs / Tube

DMD4N65-TR

TO-252

2.5Kpcs / 13” Reel

DMT4N65-TU

TO-220

50pcs / Tube

DMF4N65-TU

ITO-220

50pcs / Tube

DMD4N65-TU

TO-252

75pcs / Tube

Block Diagram

D

G

S

DMK4N65-TU

TO-262

50pcs / Tube

DMG4N65-TU

TO-263

50pcs / Tube

DMG4N65-TR

TO-263

800pcs / 13" Reel