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3N60 Datasheet(PDF) 2 Page - DIYI Electronic Technology Co., Ltd. |
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3N60 Datasheet(HTML) 2 Page - DIYI Electronic Technology Co., Ltd. |
2 / 8 page 2 / 8 THERMAL DATA 3N60 600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 110 Junction to Case TO-220/TO-262/TO-263 θJC 1.70 °C/W ITO-220 3.70 TO-251/ TO-252 2.6 PARAMETER SYMBOL TEST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GS V = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DS V = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) 3.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz pF Output Capacitance COSS pF Reverse Transfer Capacitance CRSS pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 35 50 ns Turn-On Rise Time tR ns 60 70 Turn-Off Delay Time tD(OFF) ns 100 150 Turn-Off Fall Time tF 75 ns Total Gate Charge QG 18.5 23 nC Gate-Source Charge QGS nC 5.2 Gate-Drain Charge QGD nC 4.9 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 3.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A Reverse Recovery Time trr VGS = 0 V, IS = 3A, dIF/dt = 100 A/μs (Note 1) 210 ns Reverse Recovery Charge QRR μC 1.2 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature May,2015-REV.00 www.dyelec.com VGS = -30V, VDS = 0V 350 50 5.5 450 65 7.5 VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 65 - VGS=10 V, ID=1.5A VDS=50V, ID=1.3 A, IG=100μA VGS=10V (Note 1, 2) - GS V =0 V, IS=3.0A |
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