Feb.1999

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR16A, BCR16B, BCR16C, BCR16E

MEDIUM POWER USE

A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MAXIMUM RATINGS (continue)

Test conditions

BCR16A

BCR16B

BCR16C

BCR16E

BCR16A only, 10 sec.

BCR16C only (Typical value)

Symbol

—

—

—

Parameter

Storage temperature

Weight (Typical value)

Soldering temperature

Mounting torque

Isolated voltage

Ratings

–20 ~ +125

3.0

8.5

8.5

9.5

230

30

2.94

1500

Unit

°C

g

°C

kg·cm

N·m

V

Symbol

Test conditions

measurement

Junction to case (BCR16A, BCR16B, BCR16C)

Junction to base (BCR16E)

Unit

mA

V

V

V

V

mA

mA

mA

V

°C/W

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

!

@

#

!

@

#

Parameter

Repetitive peak off-state current

On-state voltage

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

ELECTRICAL CHARACTERISTICS

Test conditions

Voltage

class

8

10

(V)

400

500

Min.

—

10

—

10

Commutating voltage and current waveforms

(inductive load)

Symbol

R

L

R

L

Unit

V/

µs

1. Junction temperature

°C

2. Rate of decay of on-state commutat-

ing current

3. Peak off-state voltage

Limits

Min.

—

—

—

—

—

—

—

—

0.2

—

—

V3

Max.

3.0

1.6

1.5

1.5

1.5

30

30

30

—

1.2

2.5

—

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c