Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

CMT06N60 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. CMT06N60
Description  POWER FIELD EFFECT TRANSISTOR
Download  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  ETC [List of Unclassifed Manufacturers]
Homepage  
Logo 

CMT06N60 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

   
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
CMT06N60
POWER FIELD EFFECT TRANSISTOR
2003/06/19
Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 3
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT06N60
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
V(BR)DSS
600
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
IDSS
100
50
μ
A
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
RDS(on)
1.2
Forward Transconductance (VDS = 15 V, ID = 3.0A) *
gFS
3.4
mhos
Input Capacitance
Ciss
1498
2100
pF
Output Capacitance
Coss
158
220
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
29
60
pF
Turn-On Delay Time
td(on)
14
30
ns
Rise Time
tr
19
40
ns
Turn-Off Delay Time
td(off)
40
80
ns
Fall Time
(VDD = 300 V, ID = 6.0 A,
VGS = 10 V,
RG = 9.1Ω) *
tf
26
55
ns
Total Gate Charge
Qg
35.5
50
nC
Gate-Source Charge
Qgs
8.1
nC
Gate-Drain Charge
(VDS = 300 V, ID = 6.0 A,
VGS = 10 V)*
Qgd
14.1
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
0.83
1.2
V
Forward Turn-On Time
ton
**
ns
Reverse Recovery Time
(IS = 6.0 A,
dIS/dt = 100A/µs)
trr
266
ns
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance


Html Pages

1  2  3  4  5  6 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn