IPX60R330P6 datasheet(6/19 Pages) INFINEON

Part #	IPX60R330P6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 19 page

6

600VCoolMOS™P6PowerTransistor

IPW60R330P6,IPB60R330P6,IPP60R330P6,

IPA60R330P6

Rev.2.2,2015-07-10

Final Data Sheet

4Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table6Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

600

-

V

VGS=0V,ID=1mA

Gate threshold voltage

V(GS)th

3.5

4.0

4.5

V

VDS=VGS,ID=0.37mA

Zero gate voltage drain current

IDSS

-

10

1

-

µA

VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current

IGSS

-

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.297

0.772

0.330

-

Ω

VGS=10V,ID=4.5A,Tj=25°C

VGS=10V,ID=4.5A,Tj=150°C

Gate resistance

RG

-

6.7

-

Ω

f=1MHz,opendrain

Table7Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

1010

-

pF

VGS=0V,VDS=100V,f=1MHz

Output capacitance

Coss

-

47

-

pF

VGS=0V,VDS=100V,f=1MHz

Effective output capacitance,

energy related

1)

Co(er)

-

38

-

pF

VGS=0V,VDS=0...400V

Effective output capacitance,

time related

2)

Co(tr)

-

155

-

pF

ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time

td(on)

-

12

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=3.4

Ω;seetable11

Rise time

tr

-

7

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=3.4

Ω;seetable11

Turn-off delay time

td(off)

-

33

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=3.4

Ω;seetable11

Fall time

tf

-

7

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=3.4

Ω;seetable11

Table8Gatechargecharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

6

-

nC

VDD=400V,ID=5.6A,VGS=0to10V

Gate to drain charge

Qgd

-

8

-

nC

VDD=400V,ID=5.6A,VGS=0to10V

Gate charge total

Qg

-

22

-

nC

VDD=400V,ID=5.6A,VGS=0to10V

Gate plateau voltage

Vplateau

-

6.1

-

V

VDD=400V,ID=5.6A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V

2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

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