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M68AW512M Datasheet(PDF) 6 Page - STMicroelectronics

Part # M68AW512M
Description  8 Mbit (512K x16) 3.0V Asynchronous SRAM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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M68AW512M
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OPERATION
The M68AW512M has a Chip Enable power down
feature which invokes an automatic standby mode
whenever either Chip Enable is de-asserted
(E = High) or LB and UB are de-asserted (LB and
UB = High). An Output Enable (G) signal provides
a high speed tri-state control, allowing fast read/
write cycles to be achieved with the common I/O
data bus. Operational modes are determined by
device control inputs W, E, LB and UB as summa-
rized in the Operating Modes table (see Table 2).
Read Mode
The M68AW512M is in the Read mode whenever
Write Enable (W) is High with Output Enable (G)
Low, and Chip Enable (E) is asserted. This pro-
vides access to data from eight or sixteen, de-
pending on the status of the signal UB and LB, of
the 8,388,608 locations in the static memory array,
specified by the 19 address inputs. Valid data will
be available at the eight or sixteen output pins
within tAVQV after the last stable address, provid-
ing G is Low and E is Low. If Chip Enable or Output
Enable access times are not met, data access will
be measured from the limiting parameter (tELQV,
tGLQV or tBLQV) rather than the address. Data out
may be indeterminate at tELQX, tGLQX and tBLQX
but data lines will always be valid at tAVQV.
Write Mode
The M68AW512M is in the Write mode whenever
the W and E are Low. Either the Chip Enable input
(E) or the Write Enable input (W) must be de-
asserted
during
Address
transitions
for
subsequent write cycles. When E (W) is Low, and
UB or LB is Low, write cycle begins on the W (E)'s
falling edge. When E and W are Low, and UB = LB
= High, write cycle begins on the first falling edge
of UB or LB. Therefore, address setup time is
referenced to Write Enable, Chip Enable or UB/LB
as tAVWL, tAVEL and tAVBL respectively, and is
determined by the latter occurring edge.
The Write cycle can be terminated by the earlier
rising edge of E, W or UB/LB.
If the Output is enabled (E = Low, G = Low, LB or
UB = Low), then W will return the outputs to high
impedance within tWLQZ of its falling edge. Care
must be taken to avoid bus contention in this type
of operation. Data input must be valid for tDVWH
before the rising edge of Write Enable, or for tDVEH
before the rising edge of E, or for tDVBH before the
rising edge of UB/LB whichever occurs first, and
remain valid for tWHDX, tEHDX and tBHDX respec-
tively.
Table 2. Operating Modes
Note: 1. X = VIH or VIL.
Operation
E
W
G
LB
UB
DQ0-DQ7
DQ8-DQ15
Power
Deselected
VIH
XXX
X
Hi-Z
Hi-Z
Standby (ISB)
Deselected
X
X
X
VIH
VIH
Hi-Z
Hi-Z
Standby (ISB)
Lower Byte Read
VIL
VIH
VIL
VIL
VIH
Data Output
Hi-Z
Active (ICC)
Lower Byte Write
VIL
VIL
X
VIL
VIH
Data Input
Hi-Z
Active (ICC)
Output Disabled
VIL
VIH
VIH
X
X
Hi-Z
Hi-Z
Active (ICC)
Upper Byte Read
VIL
VIH
VIL
VIH
VIL
Hi-Z
Data Output
Active (ICC)
Upper Byte Write
VIL
VIL
X
VIH
VIL
Hi-Z
Data Input
Active (ICC)
Word Read
VIL
VIH
VIL
VIL
VIL
Data Output
Data Output
Active (ICC)
Word Write
VIL
VIL
X
VIL
VIL
Data Input
Data Input
Active (ICC)


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