IPN50R1K4CE datasheet(3/13 Pages) INFINEON

Part #	IPN50R1K4CE

Description	500V CoolMOS짧 CE Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 13 page

3

500VCoolMOSªCEPowerTransistor

IPN50R1K4CE

Rev.2.1,2016-06-13

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

4.8

3.1

A

TC = 25°C

TC = 100°C

Pulsed drain current

2)

ID,pulse

-

8.8

A

TC = 25°C

Avalanche energy, single pulse

EAS

-

49

mJ

ID = 1.1A; VDD = 50V

Avalanche energy, repetitive

EAR

-

0.07

mJ

ID = 1.1A; VDD = 50V

Avalanche current, repetitive

IAR

-

1.1

A

-

MOSFET dv/dt ruggedness

dv/dt

-

50

V/ns

VDS=0...400V

Gate source voltage

VGS

-20

-30

-

20

30

V

static;

AC (f>1 Hz)

Power dissipation

Ptot

-

5.0

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-40

-

150

°C

-

Continuous diode forward current

IS

-

1.2

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

8.8

A

TC = 25°C

Reverse diode dv/dt

3)

dv/dt

-

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C,

tcond<2

µs

Maximum diode commutation speed

3)

dif/dt

-

500

A/

µs VDS=0...400V,ISD<=IS,Tj=25°C,

tcond<2

µs

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - solder

point

RthJS

-

24.4

°C/W -

Thermal resistance, junction - ambient

for minimal footprint

RthJA

-

160

°C/W minimal footprint

Thermal resistance, junction - ambient

soldered on copper area

RthJA

-

75

°C/W

Device on 40mm*40mm*1.5 epoxy

PCB FR4 with 6cm

2 (one layer 70

µm

thick) copper area for drain

connection and cooling. PCB is

vertical without blown air.

Soldering temperature, wavesoldering

only allowed at leads

Tsold

-

260

°C

reflow MSL3

1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5

2) Pulse width tp limited by Tj,max

3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

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