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TDA7565 Datasheet(PDF) 3 Page - STMicroelectronics |
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TDA7565 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page  3/10 TDA7565 ELECTRICAL CHARACTERISTICS (Refer to the test circuit, VS = 13.5V; RL = 4Ω; f = 1KHz; Voltage converter Disabled (VCOff); Tamb = 25°C; unless otherwise specified.) Symbol Parameter Test Condition Min. Typ. Max. Unit POWER AMPLIFIER VS Supply Voltage Range 8 18 V Id Total Quiescent Drain Current 180 300 mA Id Total Quiescent Drain Current (VCon) TBD mA PO Output Power (VCoff) V = 14.4V EIAJ (VS = 13.7V) 35 W THD = 10% THD = 1% 25 20 W W PO Output Power (VCon) V = 14.4V EIAJ (VS = 13.7V) 60 W THD = 10% THD = 1% 40 31 W W THD Total Harmonic Distortion PO = 1W to 12W; STDMODE HE MODE; PO = 1-2W HE MODE; PO = 4-12W 0.03 0.03 0.1 0.1 % % % PO = 1-12W, f = 10kHz 0.15 0.5 % CT Cross Talk f = 1KHz to 10KHz, RG = 600Ω 50 55 dB RIN Input Impedance 60 100 130 K Ω GV1 Voltage Gain 1 25.5 26 26.5 dB ∆GV1 Voltage Gain Match 1 -1 1 dB GV2 Voltage Gain 2 11.5 12 12.5 dB ∆GV2 Voltage Gain Match 2 -1 1 dB EIN1 Output Noise Voltage 1 Rg = 600Ω; GV = 26dB filter 20Hz to 22kHz 60 100 µV EIN2 Output Noise Voltage 2 Rg = 600Ω; GV = 26dB filter 20Hz to 12kHz 15 20 µV SVR Supply Voltage Rejection f = 100Hz to 10kHz; Vr = 1Vpk; Rg = 600Ω 50 60 dB BW Power Bandwidth (-3dB) 75 KHz ASB Stand-by Attenuation 70 100 dB ISB Stand-by Current 100 µA AM Mute Attenuation 70 90 dB VOS Offset Voltage Mute & Play -100 100 mV VAM Min. Supply Voltage Threshold 6.5 7 7.5 V Slew Rate 1.5 V/ µs TON Turn on Delay D2/D1 (IB1) 0 to 1 10 20 ms TOFF Turn off Delay D2/D1 (IB1) 1 to 0 10 20 ms Thermal Foldback Junction Temperature 155 170 185 °C CDTHD Clip Det THD level D0 (IB1) = 0 0 1 2 % D0 (IB1) = 1 5 10 15 % VO Offset Detection Power Amplifier = play AC Input = 0 ±1.5 ±2 ±2.5 V Thw Thermal Warning 165 °C I2C BUS INTERFACE fSCL Clock Frequency 400 KHz VIL Input Low Voltage 1.5 V VIH Input High Voltage 2.3 V |
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