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IPS12CN10LG Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPS12CN10LG Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page IPS12CN10L G IPP12CN10L G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 4210 5600 pF Output capacitance C oss - 528 702 Reverse transfer capacitance C rss - 29 - Turn-on delay time t d(on) - 14 - ns Rise time t r - 9 - Turn-off delay time t d(off) - 39 - Fall time t f - 5 - Gate Charge Characteristics 5) Gate to source charge Q gs - 16 - nC Gate to drain charge Q gd - 10 - Switching charge Q sw - 13 - Gate charge total Q g - 58 - Gate plateau voltage V plateau - 3.7 - V Output charge Q oss V DD=50 V, V GS=0 V - 54 - nC Reverse Diode Diode continous forward current I S - - 69 A Diode pulse current I S,pulse - - 276 Diode forward voltage V SD V GS=0 V, I F=69 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 101 - ns Reverse recovery charge Q rr - 193 - nC 5) See figure 16 for gate charge parameter definition V R=50 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=34.5 A, R G=1.6 W V DD=50 V, I D=69 A, V GS=0 to 10 V Rev. 1.03 page 3 2011-09-05 |
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