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IPP70N10S3L-12 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPP70N10S3L-12
Description  OptiMOS -T Power-Transistor
Download  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP70N10S3L-12 Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I D
T C=25 °C, V GS=10 V
70
A
T C=100 °C,
V GS=10 V
1)
48
Pulsed drain current
1)
I D,pulse
T C=25 °C
280
Avalanche energy, single pulse
1)
E AS
I D=35A
410
mJ
Avalanche current, single pulse
I AS
70
A
Gate source voltage
2)
V GS
±20
V
Power dissipation
P tot
T C=25 °C
125
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V DS
100
V
R DS(on),max (SMD version)
12
m
W
I D
70
A
Product Summary
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Type
Package
Marking
IPB70N10S3L-12
PG-TO263-3-2
3N10L12
IPI70N10S3L-12
PG-TO262-3-1
3N10L12
IPP70N10S3L-12
PG-TO220-3-1
3N10L12
Rev. 1.2
page 1
2012-05-10


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