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IPS65R650CE Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPS65R650CE Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 14 page 4 650VCoolMOSªCEPowerTransistor IPS65R650CE Rev.2.0,2016-02-25 Final Data Sheet 2Thermalcharacteristics Table3ThermalcharacteristicsTO-252 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.45 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed Tsold - - 260 °C reflow MSL1 |
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