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FDC6333C Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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FDC6333C Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 8 page FDC6333C Rev C (W) Typical Characteristics: P-Channel (continued) 0 2 4 6 8 10 0 1 2 3 4 5 Qg, GATE CHARGE (nC) ID = -2.0A VDS = -5V -15V -10V 0 50 100 150 200 250 300 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT V GS = 10V SINGLE PULSE RθJA = 180 oC/W T A = 25 oC 10ms 1ms 10µs 100µs 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 180°C/W TA = 25°C Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 180°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
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