SQ9945AEY datasheet(2/9 Pages) VISHAY

Part #	SQ9945AEY

Description	Dual N-Channel 60 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74499

2

S-81559-Rev. B, 23-Oct-08

SQ9945AEY

Vishay Siliconix

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

-

3.0

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 60 V

-

1.0

µA

VGS = 0 V

VDS = 60 V

-

10

VGS = 0 V

VDS = 60 V, TJ = 55 °C

-

On-State Drain Currenta

ID(on)

VGS = 10 V

VDS ≥ 5 V

20

-

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V

ID = 3.7 A

-

0.060

0.080

Ω

VGS = 10 V

ID = 30 A, TJ = 125 °C

-

VGS = 10 V

ID = 30 A, TJ = 175 °C

-

Forward Transconductancea

gfs

VDS = 15 V, ID = 3.7 A

-

11

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

--

-

pF

Output Capacitance

Coss

--

-

Reverse Transfer Capacitance

Crss

--

-

Total Gate Chargec

Qg

VGS = 10 V

VDS = 30 V, ID = 3.7 A

-11

20

nC

Gate-Source Chargec

Qgs

-2

-

Gate-Drain Chargec

Qgd

-2

-

Turn-On Delay Time c

td(on)

VDD = 30 V, RL = 30 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

-9

20

ns

Rise Timec

tr

-10

20

Turn-Off Delay Timec

td(off)

-21

40

Fall Timec

tf

-8

20

Source-Drain Diode Ratings and Characteristics TC = 25 °Cb

Pulsed Currenta

ISM

--

-

A

Forward Voltage

VSD

IF = 85 A, VGS = 0 V

-

V

Reverse Recovery Time

trr

IF = 2 A, dI/dt = 100 A/µs

-45

80

ns

Peak Reverse Recovery Current

IRM(REC)

--

-

A

Reverse Recovery Charge

Qrr

--

-

µC

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