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BSS69 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. BSS69
Description  SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
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SOT23 PNP SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 1995 7
PARTMARKING DETAILS — BSS69 -
L2
BSS70 -
L3
BSS69R - L6
BSS70R - L7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-200
mA
Continuous Collector Current
IC
-100
mA
Base Current
IB
-50
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
-40
V
IC=-1mA
Collector-Base Breakdown Voltage
V(BR)CBO
-40
V
IC=-10µA
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µA
Collector- Emitter Cut-off Current
ICES
-50
nA
VCES=-30V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.25
-0.40
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
Base-Emitter Saturation Voltage
VBE(sat)
-0.65
-0.85
-0.95
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
Static Forward Current
BSS69
Transfer Ratio
hFE
30
40
50
30
15
150
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
Static Forward Current
BSS70
Transfer Ratio
hFE
60
80
100
60
30
300
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
Transition Frequency
BSS69
BSS70
fT
200
250
MHz
MHz
IC=-10mA, VCE=-20V
f=100MHz
Collector-Base Capacitance
Cobo
4.5
pF
VCB=-5V, f=100kHz
Emitter-Base Capacitance
Cibo
10
pF
VEB=-0.5V, f=100kHz
Noise Figure
N
Typ. 5
dB
IC=-100µΑ, VCE=-5V
RS=1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
td; tf
ts
tf
35
225
70
ns
ns
ns
VCC=-3V, IC=-10mA
IB1= IB2 =-1mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BSS69
BSS70
C
B
E
PAGE NUMBER


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