IPB100N04S4-H2 datasheet(3/9 Pages) INFINEON

Part #	IPB100N04S4-H2

Description	OptiMOS짰-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 9 page

IPB100N04S4-H2

IPI100N04S4-H2, IPP100N04S4-H2

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

5520

7180

pF

Output capacitance

C oss

-

1250

1750

Reverse transfer capacitance

Crss

-

42

97

Turn-on delay time

t d(on)

-

18

-

ns

Rise time

t r

-

13

-

Turn-off delay time

t d(off)

-

19

-

Fall time

t f

-

21

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-

32

42

nC

Gate to drain charge

Q gd

-

10

23

Gate charge total

Q g

-

70

90

Gate plateau voltage

V plateau

-

5.5

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

100

A

Diode pulse current

2)

I S,pulse

-

400

Diode forward voltage

V SD

V GS=0V, I F=100A,

T j=25°C

-

0.9

1.3

V

Reverse recovery time

2)

t rr

V R=20V, I F=50A,

di F/dt =100A/µs

-

48

-

ns

Reverse recovery charge

2)

Q rr

-

54

-

nC

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 1.3K/W the chip is able to carry 172A at 25°C.

T C=25°C

Values

V GS=0V, V DS=25V,

f =1MHz

V DD=20V, V GS=10V,

I D=100A, R G=3.5W

V DD=32V, I D=100A,

V GS=0 to 10V

Rev. 1.0

page 3

2012-07-02

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IPB100N04S4-H2 Datasheet(PDF) 3 Page - Infineon Technologies AG

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