IPB120N04S4L02 datasheet(2/9 Pages) INFINEON

Part #	IPB120N04S4L02

Description	OptiMOSTM-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

IPB120N04S4L-02

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

2)

Thermal resistance, junction - case

R thJC

-

0.95

K/W

Electrical characteristics,

at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0V, I D= 1mA

40

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=110µA

1.2

1.7

2.2

Zero gate voltage drain current

I DSS

V DS=40V, V GS=0V

-0.05

1

µA

V DS=18V, V GS=0V,

T j=85°C

2)

-1

20

Gate-source leakage current

I GSS

V GS=20V, V DS=0V

-

100

nA

Drain-source on-state resistance

R DS(on)

V GS=4.5V, I D=50A

-1.9

2.3

m

Ω

V GS=10 V, I D=100 A

-1.4

1.7

Values

Rev. 1.0

page 2

2013-06-03

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IPB120N04S4L02 Datasheet(PDF) 2 Page - Infineon Technologies AG

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