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2SK3233 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK3233 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 10 page 2SK3233 4 Main Characteristics 40 30 20 10 0 50 100 150 200 30 10 3 1 0.3 0.1 13 10 30 100 300 1000 10 8 6 4 2 0 10 20 30 40 50 10 8 6 4 2 0 24 68 10 0.03 0.01 100 Ta = 25 °C V = 4V GS 5 V 5.5 V Tc = 75 °C 25 °C –25 °C Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics V = 10 V DS 100 µs 1 ms PW = 10 ms (1shot) DC Operation (Tc = 25 °C) 10 µs 4.5 V 8 V 10 V 6 V Pulse Test Operation in this area is limited by RDS(on) Pulse Test |
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