SGA-8343 datasheet(2/4 Pages) ETC

Part #	SGA-8343

Description	Low Noise, High Gain SiGe HBT

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SGA-8343 Low Noise SiGe HBT

Preliminary

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

2

726 Palomar Ave., Sunnyvale, CA 94085

EDS-101845 Rev. A

0

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Typical Performance - Deembedded S-Parameters

Note: S-parameters are de-embedded to the device leads with Z

S=ZL=50Ω. The data represents typical performace of the device.

De-

embedded s-parameters can be downloaded from our website (www.stanfordmicro.com).

Gain vs Frequency (3V,10mA)

Gain vs Frequency (2V,10mA)

Gain

Gmax

Frequency (GHz)

S11,S22 vs Frequency (3V,10mA)

S11,S22 vs Frequency (2V,10mA)

Isolation

Gmax

Gain

0.0

0.2

0.5

1.0

2.0

5.0

0.2

0.5

1.0

2.0

5.0

inf

0.2

0.5

1.0

2.0

5.0

1 GHz

4 GHz

8 GHz

6 GHz

3 GHz

2 GHz

S11

S22

0.0

0.2

0.5

1.0

2.0

5.0

0.2

0.5

1.0

2.0

5.0

inf

0.2

0.5

1.0

2.0

5.0

1 GHz

4 GHz

8 GHz

6 GHz

3 GHz

2 GHz

S11

S22

Typical Performance - P1dB, OIP3, Gain

q

e

r

F

)

z

H

M

(

V

E

C

)

V

(

I

Q

C

)

A

m

(

B

d

1

P

)

m

B

d

(

3

P

I

O

)

m

B

d

(

n

i

a

G

)

B

d

(

Z

T

P

O

L

g

a

M

∠

g

n

A

0

9

2

0

10

.

0

10

.

2

20

.

5

20

5

.

0

∠

3

.

3

4

1

0

22

.

0

10

.

4

20

.

4

24

2

.

0

∠

6

.

6

1

3

0

10

.

3

15

.

4

24

.

4

26

3

.

0

∠

2

.

6

1

0

23

.

3

10

.

8

24

.

4

26

3

.

0

∠

2

.

6

1

0

9

1

2

0

10

.

0

10

.

3

27

.

6

13

4

.

0

∠

2

.

1

9

0

22

.

0

10

.

6

24

.

6

12

3

.

0

∠

1

.

4

2

3

0

10

.

3

10

.

6

20

.

8

14

5

.

0

∠

2

.

5

1

0

23

.

3

15

.

8

20

.

8

18

3

.

0

∠

0

.

4

1

0

4

2

0

10

.

0

10

.

3

20

.

5

11

3

.

0

∠

0

.

5

4

0

22

.

0

10

.

4

20

.

5

19

2

.

0

∠

3

.

3

0

10

.

3

15

.

7

23

.

5

14

4

.

0

∠

2

.

9

0

23

.

3

10

.

9

23

.

5

16

3

.

0

∠

3

.

3

1

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