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FF300R12KE4P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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FF300R12KE4P Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2 TechnischeInformation/TechnicalInformation FF300R12KE4P IGBT-Modul IGBT-Module preparedby:AKB approvedby:MK dateofpublication:2016-04-04 revision:V2.0 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 80°C, Tvj max = 175°C IC nom 300 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 600 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,00 2,05 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 2,50 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 2,5 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 19,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,70 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω td on 0,20 0,25 0,27 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω tr 0,045 0,05 0,055 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω td off 0,50 0,60 0,62 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω tf 0,10 0,16 0,18 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 150°C) RGon = 1,8 Ω Eon 16,5 25,0 30,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) RGoff = 1,8 Ω Eoff 23,5 35,0 39,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 1200 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proIGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial RthJH 0,121 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
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