TPS54311, TPS54312

TPS54313, TPS54314

TPS54315, TPS54316

SLVS416A – FEBRUARY 2002 – JULY 2003

www.ti.com

4

ELECTRICAL CHARACTERISTICS (continued)

TJ = –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ERROR AMPLIFIER

Error amplifier open loop voltage gain(1)

26

dB

Error amplifier unity gain bandwidth(1)

3

5

MHz

PWM COMPARATOR

PWM comparator propagation delay time,

PWM comparator input to PH pin (ex-

cluding dead time)

10 mV overdrive(1)

70

85

ns

SLOW-START/ENABLE

Enable threshold voltage, SS/ENA

0.82

1.20

1.40

V

Enable hysteresis voltage, SS/ENA(1)

0.03

V

Falling edge deglitch, SS/ENA(1)

2.5

µs

TPS54311

2.6

3.3

4.1

TPS54312

3.5

4.5

5.4

TPS54313

4.4

5.6

6.7

Internal slow-start time(1)

TPS54314

2.6

3.3

4.1

ms

TPS54315

3.6

4.7

5.6

TPS54316

4.7

6.1

7.6

Charge current, SS/ENA

SS/ENA = 0 V

3

5

8

µA

Discharge current, SS/ENA

SS/ENA = 0.2 V,

VI = 1.5 V

1.5

2.3

4

mA

POWER GOOD

Power good threshold voltage

VSENSE falling

90

%Vref

Power good hysteresis voltage(1)

3

%Vref

Power good falling edge deglitch(1)

35

µs

Output saturation voltage, PWRGD

I(sink) = 2.5 mA

0.18

0.30

V

Leakage current, PWRGD

VI = 5.5 V

1

µA

CURRENT LIMIT

VI = 3 V, output shorted(1)

4

6.5

Current limit trip point

VI = 6 V, output shorted(1)

4.5

7.5

A

Current limit leading edge blanking time

(1)

100

ns

Current limit total response time

(1)

200

ns

THERMAL SHUTDOWN

Thermal shutdown trip point(1)

135

150

165

°C

Thermal shutdown hysteresis(1)

10

°C

OUTPUT POWER MOSFETS

VI = 6 V(2)

59

88

Ω

rDS(on)

Power MOSFET switches

VI = 3 V(2)

85

136

m

Ω

(1) Specified by design

(2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design