TMS28F010B

131072 BY 8-BIT

FLASH MEMORY

SMJS824B – MAY 1995 – REVISED AUGUST 1997

9

POST OFFICE BOX 1443

Fastwrite algorithm

The TMS28F010B is programmed using the Texas Instruments Fastwrite algorithm shown in Figure 1. This

algorithm programs in a nominal time of two seconds.

Fasterase algorithm

The TMS28F010B is erased using the Texas Instruments Fasterase algorithm shown in Figure 2. The memory

array needs to be completely programmed (using the Fastwrite algorithm) before erasure begins. Erasure

typically occurs in one second.

parallel erasure

To reduce total erase time, several devices can be erased in parallel. Since each Flash Memory can erase at

a different rate, every device must be verified separately after each erase pulse. After a given device has been

successfully erased, the erase command should not be issued to this device again. All devices that complete

erasure should be masked until the parallel erasure process is finished (see Figure 3).

Examples of how to mask a device during parallel erase include driving the E pin high, writing the read command

(00h) to the device when the others receive a set-up-erase or erase command, or disconnecting it from all

electrical signals with relays or other types of switches.