SiA537EDJ

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Vishay Siliconix

S13-2635-Rev. A, 30-Dec-13

9

Document Number: 62934

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

2

4

6

8

0369

12

15

18

Q

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

1.2

V

0.25

0.35

0.45

0.55

0.65

0.75

- 50

- 25

0

25

50

75

100

125

150

T

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 50

- 25

0

25

50

75

100

125

150

T

0.00

0.03

0.06

0.09

0.12

0.15

0.18

0

1234

5

V

1000

100

1

0.001

0.01

0.1

10

Pulse (s)

20

10

5

15

0