Electronic Components Datasheet Search |
|
SI1028X Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SI1028X Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 Vishay Siliconix Si1028X This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 33 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 2.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 20 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 0.5 A 0.540 0.650 VGS = 4.5 V, ID = 0.2 A 0.640 0.770 Forward Transconductance gfs VDS = 10 V, ID = 0.5 A 1S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 16 pF Output Capacitance Coss 8 Reverse Transfer Capacitance Crss 4 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 0.5 A 12 nC VDS = 15 V, VGS = 4.5 V, ID = 0.5 A 0.5 1 Gate-Source Charge Qgs 0.15 Gate-Drain Charge Qgd 0.20 Gate Resistance Rg f = 1 MHz 50 Turn-On Delay Time td(on) VDD = 15 V, RL = 37.5 ID 0.38 A, VGEN = 4.5 V, Rg = 1 816 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 918 Fall Time tf 816 Turn-On Delay Time td(on) VDD = 15 V, RL = 37.5 ID 0.38 A, VGEN = 10 V, Rg = 1 24 Rise Time tr 918 Turn-Off Delay Time td(off) 714 Fall Time tf 816 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 1A Body Diode Voltage VSD IS = 0.38 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 0.38 A, dI/dt = 100 A/µs 918 ns Body Diode Reverse Recovery Charge Qrr 24 nC Reverse Recovery Fall Time ta 5 ns Reverse Recovery Rise Time tb 4 |
Similar Part No. - SI1028X |
|
Similar Description - SI1028X |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |